Photoelectrochemical study of pitting on iron in borate buffer solution containing inhibitor

被引:4
作者
Yang, M
Chen, L
Cai, S
机构
[1] Department of Chemistry, Peking University, Beijing
关键词
chloride; iron; n-type semiconductor; oxide film; passivation; photocurrent; pitting;
D O I
10.5006/1.3280428
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The photoelectrochemical behavior and the susceptibility of iron to pitting in borate buffer containing chloride ions (Cl-) were investigated in the presence and absence of inhibitor PC-604(dagger), which is a mixture of polyhydric alcohol phosphoric ester and polyphosphoric ester of various molecular weights. Measurements of the band gap (E-g) of the passive film on iron showed inhibitor concentration and passivation time did not interfere with E-g. Photocurrent and photocurrent transients increased with increasing Inhibitor quantities and passivation times at constant potential. The decay time-constant of the photocurrent transient was investigated as a specific parameter of the film Data showed this parameter was related to pitting susceptibility of the passive film on iron.
引用
收藏
页码:11 / 15
页数:5
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