Auger Si LVV lineshape analysis of porous p-type silicon electroplated with Fe-Co alloys

被引：3
作者：
Hamadache, F
Bertrand, P
机构：
[1] Univ Sci & Technol Houari Boumediene, Dept Mat & Composants, Fac Phys, Bab Ezzouar 16111, Algeria
[2] Univ Catholique Louvain, Unite Phys Chim & Phys Mat, B-1348 Louvain, Belgium
来源：
SURFACE AND INTERFACE ANALYSIS | 2002年 / 34卷 / 01期
关键词：
AES depth profiling; factor analysis; porous silicon; anodic etching; iron-cobalt alloys; electrodeposition;
D O I：
10.1002/sia.1291
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Different electrochemically produced porous p-type silicon layers filled with Fe-Co alloys are investigated through AES depth profiling. In this study, we analysed the lineshape changes of the Auger Si LVV transition with the sputter depth and alloy composition. Application of factor analysis to this line, together with Fe and Co LVV transitions, enabled us to identify the dominant chemical state of Si atoms at the pore walls. The structure of the Si LVV lineshape of the metallized porous p-type silicon compared with that of oxidized porous p-type silicon suggests that Si atoms are slightly bonded to oxygen. Room-temperature formation of interfacial Si-Fe-Co compounds is likely to occur upon pore filling with the alloy. This is supported by the change of this lineshape with Fe-Co composition and by the appearance of plasmon loss peaks in the Fe and Co LVV lineshapes. Copyright (C) 2002 John Wiley Sons, Ltd.
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页码：239 / 243
页数：5
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