Chrome etch challenges for 45 nm & beyond

被引：0

作者：

Chandrachood, Madhavi ^{[1
]}

Grimbergen, Michael ^{[1
]}

Ibrahim, M. Ibrahim ^{[1
]}

Panayil, Sheeba ^{[1
]}

Kumar, Ajay ^{[1
]}

机构：

[1] Appl Mat Inc, Mask Etch Prod Grp, 974 E Arques Ave, Sunnyvale, CA 94085 USA

来源：

PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XIII, PTS 1 AND 2 | 2006年 / 6283卷

关键词：

advanced mask; binary mask; chrome etch; CD control; mask etcher; 45; nm;

D O I：

10.1117/12.681759

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Requirements to meet the 45nm technology node place significant challenges on Mask makers. Resolution Enhancement Techniques (RET) employed to extend optical lithography in order to resolve sub-resolution features, have burdened mask processes margins. Also, Yield compromises loom with every nanometer of error incurred on the Mask and the Device platforms. RET techniques, such as Optical Proximity Correction (OPC), require the Mask Etcher to achieve exceptionally tight control of Critical Dimensions (CD). This ensures OPC feature integrity on the mask and resultant image fidelity of OPC structures, as well as, subsequently high and sustainable yields. (II)-I-TM This paper talks about 45 nm Chrome etch challenges and how Applied Materials Tetra I etcher provides solutions to these challenges.

引用

页数：7