Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation

被引：3

作者：

Ang, CH ^{[1
]}

Tan, SS

Lek, CM

Lin, W

Zheng, ZJ

Chen, T

Cho, BJ

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Sci, Singapore 119260, Singapore

[2] Nanyang Technol Univ, Dept Elect & Elect Engn, Singapore 639798, Singapore

[3] Chartered Semicond Mfg Ltd, Dept Technol Dev, Singapore 738406, Singapore

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 04期

关键词：

D O I：

10.1149/1.1459682

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The impact of nitrogen plasma nitridation on the interfacial quality of ultrathin oxides (1.8 and 2.6 nm) have been investigated and compared with NO nitridation. It is found that plasma-nitrided oxides are more immune to nitridation-induced degradation of channel hole mobility, and have lower intrinsic interface-trap density as compared to NO-nitrided oxides. In addition, plasma-nitrided oxides can further suppress hole mobility degradation induced by boron penetration. The superior performance of nitrogen plasma nitridation is attributed to its capability of incorporating a high level of nitrogen at the top oxide surface, while keeping the Si-SiO2 interface intact. (C) 2002 The Electrochemical Society.

引用

页码：G26 / G28

页数：3

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