Ultrafast pulse characterization using cross phase modulation in silicon

被引：29

作者：

Tien, En-Kuang ^{[1
]}

Sang, Xing-Zhu ^{[1
]}

Qing, Feng ^{[1
]}

Song, Qi ^{[1
]}

Boyraz, Ozdal ^{[1
]}

机构：

[1] Univ Calif Irvine, Dept EECS, Irvine, CA 92697 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 05期

关键词：

elemental semiconductors; optical modulation; optical waveguides; phase modulation; silicon; 1.5; MU-M; FEMTOSECOND PULSES; PHOTONIC WIRES; WAVE-GUIDES; GENERATION; WAVELENGTH;

D O I：

10.1063/1.3193538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on the high nonlinearity of the chip-scale silicon waveguide with small dispersion, a compact frequency-resolved optical gating system has been demonstrated using cross phase modulation for ultrafast pulse characterization. The principal component generalized projections algorithm is used to retrieve the amplitude and phase from the spectrogram. Amplitude and phase of a 540 fs pulse have been measured. The measured amplitude result is confirmed by the autocorrelation measurement.

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页数：3

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