A novel precision CMOS current reference for IoT systems

被引:17
作者
Hu, Jinlong [1 ,2 ]
Lu, Chao [3 ]
Xu, Huachao [1 ,2 ]
Wang, Jin [1 ,2 ]
Liang, Ke [1 ,2 ]
Li, Guofeng [1 ,2 ]
机构
[1] Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin Key Lab Optoelect Sensor & Sensing Networ, Tianjin, Peoples R China
[2] Nankai Univ, Engn Res Ctr Thin Film Optoelect Technol, Minist Educ, Tianjin, Peoples R China
[3] Southern Illinois Univ, Dept Elect & Comp Engn, Carbondale, IL 62901 USA
关键词
Current reference; Temperature coefficient; Line regulation; Low power; Low supply voltage; CURRENT REFERENCE CIRCUIT; VOLTAGE REFERENCE; PPM/DEGREES-C; SUBTHRESHOLD VOLTAGE; TEMPERATURE; BANDGAP;
D O I
10.1016/j.aeue.2020.153577
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a low-voltage and low-power CMOS precision current reference circuit, which leads to high current stability to temperature and supply variation. By exploiting the dependence of the threshold voltage and its temperature characteristics on the transistor size, a new temperature compensation method is proposed to greatly improve the temperature stability of current references and reduce its area. In addition, a novel topology is proposed to drastically enhance the supply voltage stability of current references and further improve its temperature stability. Based on a 0.18 mu m standard CMOS process, post-layout simulation results show that the proposed design achieves a mean temperature coefficient (TC) of 15.71 ppm/degrees C over the temperature range of -20 degrees C to 120 degrees C at a 0.6 V supply voltage. The line regulation (LR) is 0.04%/V over the supply voltage range from 0.6 V to 1.8 V at 27 degrees C. The power consumption is 207 nW at a 0.6 V supply voltage, and the active area is 0.00808 mm(2).
引用
收藏
页数:11
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