Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111)

被引:102
作者
Hamaya, K. [1 ,2 ]
Itoh, H. [3 ]
Nakatsuka, O. [4 ]
Ueda, K. [1 ]
Yamamoto, K. [1 ]
Itakura, M. [5 ]
Taniyama, T. [2 ,6 ]
Ono, T. [7 ]
Miyao, M. [1 ]
机构
[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] Kansai Univ, Dept Pure & Appl Phys, Suita, Osaka 5648680, Japan
[4] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[5] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan
[6] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
[7] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
关键词
MAGNETIC-PROPERTIES; SILICON; FE3SI;
D O I
10.1103/PhysRevLett.102.137204
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2(1)-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x approximate to 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe3-xMnxSi alloys become half-metallic for 0.75 <= x <= 1.5. We discuss the possibility of room-temperature ferromagnetic Fe3-xMnxSi/Ge epilayers with high spin polarization.
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页数:4
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