Scanned potential microscopy of edge states in a quantum Hall liquid

被引：4

作者：

Woodside, MT

Vale, C

McCormick, KL

McEuen, PL

Kadow, C

Maranowski, KD

Gossard, AC

机构：

[1] Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Berkeley, CA 94720 USA

[3] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

来源：

PHYSICA E | 2000年 / 6卷 / 1-4期

基金：

美国国家科学基金会; 加拿大自然科学与工程研究理事会;

关键词：

scanned probe microscopy; quantum Hall effect; edge states;

D O I：

10.1016/S1386-9477(99)00115-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using a low-temperature atomic force microscope as a local voltmeter, we measure the Hall voltage profile in a quantum Hall conductor in the presence of a gate-induced non-equilibrium edge state population at v = 3. We observe sharp voltage drops at the sample edges which are suppressed by re-equilibrating the edge states. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：238 / 241

页数：4

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