Below 100-nm hole pattern formation using resolution enhancement lithography assisted by chemical shrink (RELACSTM)

被引：3

作者：

Toyoshima, T

Ishibashi, T

Yasuda, N

Tarutani, S

Kanda, T

Takahashi, K

Takano, Y

Tanaka, H

机构：

[1] Mitsubishi Electr Corp, Adv Tech R&D Ctr, Amagasaki, Hyogo 6618661, Japan

[2] Mitsubishi Electr Corp, ULSI Dev Ctr, Itami, Hyogo 6648641, Japan

[3] Clariant Japan KK, BU Elect Mat, Shizuoka 4371496, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2002年 / 15卷 / 03期

关键词：

RELACS; resolution enhancement; hole shrinking; chemically amplified resist;

D O I：

10.2494/photopolymer.15.377

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

We propose a new hole shrink process, which is a robust and low-cost method, named RELACS. By using the RELACS™ AZ®R500 process, which is possible to develop using only pure-water, we were able to obtain a 78-nm hole with the KrF resist pattern. The RELACS™ process is a very effective for forming below 100-nm holes. We are now trying to introduce the RELACS™ AZ®R500 process into mass production.

引用

页码：377 / 378

页数：2

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