Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers

被引：63
作者：
Houdellier, F.
Roucau, C.
Clement, L.
Rouviere, J. L.
Casanove, M. J.
机构：
[1] CNRS, Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse 4, France
[2] CEA, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble, France
来源：
ULTRAMICROSCOPY | 2006年 / 106卷 / 10期
关键词：
strain measurement; convergent beam electron diffraction; epitaxial growth; free surface relaxation;
D O I：
10.1016/j.ultramic.2006.04.011
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
A SiGe layer epitaxially grown on a silicon substrate is experimentally studied by convergent beam electron diffraction (CBED) experiments and used as a test sample to analyse the higher-order Laue zones (HOLZ) line splitting. The influence of surface strain relaxation on the broadening of HOLZ lines is confirmed. The quantitative fit of the observed HOLZ line profiles is successfully achieved using a formalism particularly well-adapted to the case of a z-dependent crystal potential (z being the zone axis). This formalism, based on a time-dependent perturbation theory approach, proves to be much more efficient than a classical Howie-Whelan approach, to reproduce the complex HOLZ lines profile in this heavily strained test sample. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：951 / 959
页数：9
相关论文
共 24 条
[1]  
[Anonymous], APPL PHYS LETT
[2]  
[Anonymous], 2003, INTRO CONVENTIONAL T
[3]  
Armigliato A, 1997, J PHYS III, V7, P2375, DOI 10.1051/jp3:1997265
[4]   Influence of experimental parameters on the determination of tetragonal distortion in heterostructures by LACBED [J].
Armigliato, A ;
Balboni, R ;
Corticelli, F ;
Frabboni, S .
MICROSCOPY MICROANALYSIS MICROSTRUCTURES, 1995, 6 (5-6) :449-456
[5]   TEM/CBED determination of strain in silicon-based submicrometric electronic devices [J].
Armigliatoa, A ;
Balboni, R ;
Balboni, S ;
Frabboni, S ;
Tixier, A ;
Carnevale, GP ;
Colpani, P ;
Pavia, G ;
Marmiroli, A .
MICRON, 2000, 31 (03) :203-209
[6]  
Balboni R, 1998, PHILOS MAG A, V77, P67, DOI 10.1080/01418619808214231
[7]   STRAINS IN CRYSTALS WITH AMORPHOUS SURFACE-FILMS STUDIED BY CONVERGENT-BEAM ELECTRON-DIFFRACTION AND HIGH-RESOLUTION IMAGING [J].
BANHART, F .
ULTRAMICROSCOPY, 1994, 56 (04) :233-240
[8]   Nanometer scale characterisation of COSi2 and NiSi induced strain in Si by convergent beam electron diffraction [J].
Benedetti, A ;
Bender, H ;
Torregiani, C ;
Van Dal, M ;
Maex, K .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 114 :61-66
[9]   THEORY OF ZONE AXIS ELECTRON-DIFFRACTION [J].
BIRD, DM .
JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1989, 13 (02) :77-97
[10]   ELECTRON-DIFFRACTION STUDIES OF STRAIN IN EPITAXIAL BICRYSTALS AND MULTILAYERS [J].
CHERNS, D ;
KIELY, CJ ;
PRESTON, AR .
ULTRAMICROSCOPY, 1988, 24 (04) :355-370
123