Nitrogen-doping effect on single-crystal diamond synthesis by HFCVD

被引：1

作者：

Kim, Min Su ^{[1
]}

Jang, Tae Hwan ^{[1
]}

Gwon, Jin Uk ^{[1
]}

Kim, Tae Gyu ^{[1
]}

Bae, Mun Ki ^{[2
]}

机构：

[1] Pusan Natl Univ, Dept Nanomechatron Engn, Busan 46241, South Korea

[2] Pusan Natl Univ, Dept Nanofus Technol, Busan 46241, South Korea

来源：

MODERN PHYSICS LETTERS B | 2022年 / 36卷 / 17期

关键词：

HFCVD; SCD; nitrogen doping;

D O I：

10.1142/S0217984922420192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen-doped homoepitaxial single-crystal diamond (SCD) films were grown on an SCD substrate by hot filament chemical vapor deposition (HFCVD) to confirm the potential that can yield high-quality single-crystal diamonds. The SCD films doped with 50 sccm nitrogen, grown by HFCVD, showed excellent surface properties based on optical microscopy, with a growth rate of 3.4 mu m/h, and a Raman peak around 1332 cm(-1) with a full width at maximum (FWHM) of 5.8 cm(-1), indicating high crystallinity. The FWHM of the (004) peak in the rocking curve was 392 arcsec for the nitrogen-doped SCD film, and that of the SCD substrate was 489 arcsec. Therefore, the crystalline properties and growth rates of the SCD films grown in the HFCVD system were improved, and the effect of nitrogen doping was verified.

引用

页数：5

共 3 条

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