Thermal conductivity of lateral epitaxial overgrown GaN films

被引：56

作者：

Luo, CY ^{[1
]}

Marchand, H ^{[1
]}

Clarke, DR ^{[1
]}

DenBaars, SP ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 26期

关键词：

D O I：

10.1063/1.125566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room-temperature thermal conductivity of lateral epitaxial overgrown metalorganic chemical vapor deposition GaN films is reported to be in excess of 155 W/m K. This compares with the reported value of 130 W/m K for bulk single crystals and a similar value (135 W/m K) for a thick (similar to 50 mu m) GaN film grown, without a nucleation layer, on sapphire by hydride vapor phase epitaxy. The measurements were made by a third-harmonic electrical measurement. (C) 1999 American Institute of Physics. [S0003-6951(99)04252-7].

引用

页码：4151 / 4153

页数：3

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