Thermal conductivity of lateral epitaxial overgrown GaN films

被引：56
|
作者：
Luo, CY [1 ]
Marchand, H [1 ]
Clarke, DR [1 ]
DenBaars, SP [1 ]
机构：
[1] Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 26期
关键词：
D O I：
10.1063/1.125566
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The room-temperature thermal conductivity of lateral epitaxial overgrown metalorganic chemical vapor deposition GaN films is reported to be in excess of 155 W/m K. This compares with the reported value of 130 W/m K for bulk single crystals and a similar value (135 W/m K) for a thick (similar to 50 mu m) GaN film grown, without a nucleation layer, on sapphire by hydride vapor phase epitaxy. The measurements were made by a third-harmonic electrical measurement. (C) 1999 American Institute of Physics. [S0003-6951(99)04252-7].
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页码：4151 / 4153
页数：3
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