Reply: Comment on 'Is memristor a dynamic element?'

被引:10
作者
Bao, Bo-Cheng [1 ]
机构
[1] Changzhou Univ, Sch Informat Sci & Engn, Changzhou 213164, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1049/el.2014.1963
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Comment of Riaza is acknowledged. In response, it is argued that by establishing the complete corresponding relations between the voltage-current relation and the constitutive relation of memristors, the conclusions in the original Letter are appropriate. It is further illustrated that if the voltage-current model is used, the memristor is regarded as a dynamic element, whereas if the flux-charge model is utilised, the memristor is treated as a non-dynamic element. The results indicate that the memristor initial conditions described by the constitutive relation should be assigned in the modelling of memristive circuits, and the dynamic nature of memristors is related with the memristive circuit model.
引用
收藏
页码:1344 / +
页数:2
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