Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure

被引：1

作者：

Numata, Ryohei ^{[1
]}

Toko, Kaoru ^{[1
]}

Usami, Noritaka ^{[2
]}

Suemasu, Takashi ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058571, Japan

[2] Nagoya Univ, Mat Phys & Energy Engn, Nagoya, Aichi 464, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 12 | 2013年 / 10卷 / 12期

关键词：

BaSi2; Al-induced crystallization; polycrystalline Si; ALUMINUM-INDUCED CRYSTALLIZATION; MOLECULAR-BEAM EPITAXY; THIN-FILMS; AMORPHOUS-SILICON; ORIENTATION; THICKNESS; INTERFACE; EXCHANGE;

D O I：

10.1002/pssc.201300336

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The formation process of high-quality BaSi2 films on glass substrates was investigated. A polycrystal-Si/Al/SiO2 structure was prepared by means of the inverted Al-induced crystallization technique. Electron backscatter diffraction (EBSD) measurements revealed that the crystal orientation of the grown Si layer varied significantly depending on the Al/Si thickness: The (111) orientation fraction reached 97% for the 50-nm-thick sample and the (100) orientation fraction reached 88% for the 200-nm-thick sample. These oriented Si layers on SiO2 glass substrates were used as templates for BaSi2 growth. The theta-2 theta X-ray diffraction patterns indicated the formation of BaSi2 films. [GRAPHICS] (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1769 / 1772

页数：4

共 23 条

[1] Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells [J].

Becker, C. ;

Conrad, E. ;

Dogan, P. ;

Fenske, F. ;

Gorka, B. ;

Haenel, T. ;

Lee, K. Y. ;

Rau, B. ;

Ruske, F. ;

Weber, T. ;

Berginski, M. ;

Huepkes, J. ;

Gall, S. ;

Rech, B. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (6-7) :855-858

[2] Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange [J].

Birajdar, B. I. ;

Antesberger, T. ;

Butz, B. ;

Stutzmann, M. ;

Spiecker, E. .

SCRIPTA MATERIALIA, 2012, 66 (08) :550-553

[3] Large-grained poly-silicon thin films by aluminium-induced crystallisation of microcrystalline silicon [J].

Ekanayake, G. ;

Quinn, T. ;

Reehal, H. S. .

JOURNAL OF CRYSTAL GROWTH, 2006, 293 (02) :351-358

[4] Interface-controlled layer exchange in metal-induced crystallization of germanium thin films [J].

Hu, Shu ;

Marshall, Ann F. ;

McIntyre, Paul C. .

APPLIED PHYSICS LETTERS, 2010, 97 (08)

[5] Epitaxial growth of semiconducting BaSi2 thin films on Si(111) substrates by reactive deposition epitaxy [J].

Inomata, Y ;

Nakamura, T ;

Suemasu, T ;

Hasegawa, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (7A) :4155-4156

[6] Thin Film Solar Cells Prepared on Low Thermal Budget Polycrystalline Silicon Seed Layers [J].

Jaeger, Christian ;

Matsui, Takuya ;

Takeuchi, Masayoshi ;

Karasawa, Minoru ;

Kondo, Michio ;

Stutzmann, Martin .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (11)

[7] On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization [J].

Jung, Mina ;

Okada, Atsushi ;

Saito, Takanobu ;

Suemasu, Takashi ;

Usami, Noritaka .

APPLIED PHYSICS EXPRESS, 2010, 3 (09)

[8] Inverted Aluminum-Induced Layer Exchange Method for Thin Film Polycrystalline Silicon Solar Cells on Insulating Substrates [J].

Kuraseko, Hiroshi ;

Orita, Nobuaki ;

Koaizawa, Hisashi ;

Kondo, Michio .

APPLIED PHYSICS EXPRESS, 2009, 2 (01) :0155011-0155013

[9] Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth [J].

Kurosawa, Masashi ;

Toko, Kaoru ;

Kawabata, Naoyuki ;

Sadoh, Taizoh ;

Miyao, Masanobu .

SOLID-STATE ELECTRONICS, 2011, 60 (01) :7-12

[10] Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation [J].

Kurosawa, Masashi ;

Kawabata, Naoyuki ;

Sadoh, Taizoh ;

Miyao, Masanobu .

APPLIED PHYSICS LETTERS, 2009, 95 (13)

← 1 2 3 →