Postannealing effects on undoped BaSi2 evaporated films grown on Si substrates

被引：23

作者：

Suhara, Takamichi ^{[1
]}

Murata, Koichi ^{[2
]}

Navabi, Aryan ^{[2
]}

Hara, Kosuke O. ^{[3
]}

Nakagawa, Yoshihiko ^{[1
]}

Cham Thi Trinh ^{[1
]}

Kurokawa, Yasuyoshi ^{[1
]}

Suemasu, Takashi ^{[4
]}

Wang, Kang L. ^{[2
]}

Usami, Noritaka ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[3] Univ Yamanashi, Ctr Crystal Sci & Technol, Kofu, Yamanashi 4008511, Japan

[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058037, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

MOLECULAR-BEAM EPITAXY; THIN-FILMS; ION-IMPLANTATION; SOLAR-CELL; SI(111);

D O I：

10.7567/JJAP.56.05DB05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semiconducting BaSi2 is expected as an alternative material for solar cell application because of large absorption coefficients and a suitable bandgap for single-junction solar cells. In this study, the electrical properties of undoped BaSi2 films grown by a simple vacuum evaporation method are explored. The obtained results show that an undoped evaporated film is an n-type semiconductor with a high carrier density of similar to 10(19) cm(-3) and exhibits a metallic behavior. The quality of BaSi2 films is significantly improved by postannealing at 1000 degrees C with surface covering to prevent oxidation. After annealing, the carrier density of BaSi2 films markedly decreases and the temperature dependence of carrier density changes from being metallic to being semiconducting. By comprehensive structural analysis, it is speculated that postannealing improves the film quality, for example, by decreasing the density of grain boundaries. (C) 2017 The Japan Society of Applied Physics

引用

页数：5

共 34 条

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