Microstructures and dielectric properties of sol-gel prepared K-doped CaCu3Ti4O12 ceramics

被引：18

作者：

Wang, Zhenduo ^{[1
]}

Guo, Jianqin ^{[1
]}

Hao, Wentao ^{[1
]}

Cao, Ensi ^{[1
]}

Zhang, Yongjia ^{[1
]}

Sun, Li ^{[1
,2
]}

Xu, Panpan ^{[3
]}

机构：

[1] Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Shanxi, Peoples R China

[2] Taiyuan Univ Technol, Minist Educ, Key Lab Adv Transducers & Intelligent Control Sys, Taiyuan 030024, Shanxi, Peoples R China

[3] Taiyuan Univ Technol, Coll Mat Sci & Engn, Taiyuan 030024, Shanxi, Peoples R China

来源：

JOURNAL OF ELECTROCERAMICS | 2018年 / 40卷 / 02期

基金：

中国国家自然科学基金;

关键词：

A.CaCu3Ti4O12; D.Dielectric properties; E.Sol-gel method; BARRIER LAYER CAPACITOR; COLOSSAL PERMITTIVITY; GRAIN-BOUNDARIES; CONSTANT; OXIDE; TEMPERATURE; FERRITES; BEHAVIOR; CCTO;

D O I：

10.1007/s10832-018-0110-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

K+ doped CaCu3Ti4O12 ceramics were prepared by the sol-gel method and sintered at different temperatures from 1040 A degrees C to 1100 A degrees C. The microstructures and various dielectric properties of Ca1-xKxCu3Ti4O12-delta ceramics were investigated. Results of XRD indicate that the Ca1-xKxCu3Ti4O12-delta samples exhibit a typical cubic structure. The grain size as well as the dielectric permittivity (epsilon') increase obviously with the increasing sintering temperature. The dielectric permittivity and dielectric loss (tan delta) measurements show strong frequency dependence in all the samples. A epsilon' value of about 2.3 x 10(4) and a low tan delta value of about 0.039 were observed at room temperature and 1 kHz in the Ca0.99K0.01Cu3Ti4O12-delta (CKCTO) ceramics sintered at 1060 A degrees C for 8 h, showing better dielectric properties than pure CCTO. Dielectric relaxations were observed in epsilon'/tan delta-T curves which may be related to the IBLC effect.

引用

页码：115 / 121

页数：7

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