High-performance texturization of multicrystalline silicon wafer by HF/HNO3/H2O system incorporated with MnO2 particles

被引：14

作者：

Liu, Huan ^{[1
,2
]}

Zhao, Lei ^{[1
,2
,3
]}

Diao, Hongwei ^{[1
]}

Wang, Wenjing ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Key Lab Solar Thermal Energy & Photovolta Syst, Inst Elect Engn, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 101卷

基金：

中国国家自然科学基金;

关键词：

Multi-crystalline silicon; Texturization; Wet acid etching; Manganese dioxide; Reflectance; Solar cell; SOLAR-CELLS; SINGLE-CRYSTALLINE; BLACK SILICON; FABRICATION; MASK; ANTIREFLECTION; HF;

D O I：

10.1016/j.mssp.2019.06.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Manganese dioxide (MnO2) particles were incorporated into the traditional wet acid etching (HF/HNO3/H2O) system to improve the texturization performance of multicrystalline silicon (mc-Si) wafers. Low surface reflectance (R) was obtained on both the slurry wire sawn (SWS) me-Si and the diamond wire sawn (DWS) me-Si. By studying the effects of the MnO2 usage amount and the reaction time on the average thickness reduction, the texture morphology and R of the textured me-Si wafer, the etching mechanism was revealed. Via optimizing the etching condition preliminarily, a low weighted average surface reflectance (R-a) for the AM1.5G sun spectrum in the wavelength range of 380-1100 nm was achieved as about 23% on SWS me-Si and about 25% on DWS me-Si.

引用

页码：149 / 155

页数：7

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