Epitaxial growth of large-area bilayer graphene on Ru(0001)

被引：31

作者：

Que, Yande ^{[1
]}

Xiao, Wende ^{[1
]}

Fei, Xiangmin ^{[1
]}

Chen, Hui ^{[1
]}

Huang, Li ^{[1
,2
]}

Du, S. X. ^{[1
]}

Gao, H. -J. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 09期

关键词：

SCANNING-TUNNELING-MICROSCOPY; SURFACE;

D O I：

10.1063/1.4868021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The lattice mismatch between the two layers leads to the formation of a moire pattern with a periodicity of similar to 21.5 nm and a mixture of AA-and AB-stacking. The root 3 x root 3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized p-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene. (C) 2014 AIP Publishing LLC.

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页数：4

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