Effects of heat treatment on properties of ITO films prepared by rf magnetron sputtering

被引：244

作者：

Hu, YL ^{[1
]}

Diao, XG ^{[1
]}

Wang, C ^{[1
]}

Hao, WC ^{[1
]}

Wang, TM ^{[1
]}

机构：

[1] Beijing Univ Aeronaut & Astronaut, Sch Sci, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China

来源：

VACUUM | 2004年 / 75卷 / 02期

关键词：

ITO films; annealing temperature; rf magnetron sputtering;

D O I：

10.1016/j.vacuum.2004.01.081

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium, tin oxide (ITO) films were deposited on glass substrates by rf magnetron sputtering using a ceramic target (In2O3-SnO2, 90-10 wt%) without extra heating. The post annealing was done in air and in vacuum, respectively. The effects of annealing on the structure, surface morphology, optical and electrical properties of the ITO films were studied. The results show that the increase of the annealing temperature improves the crystallinity of the films, increases the surface roughness, and improves the optical and electrical properties. The transmittance of the films in visible region is increased over 90% after the annealing process in air or in vacuum. The resistivity of the films deposited is about 8.125 x 10(-4) Omega cm and falls down to 2.34 x 10(-4) Omega cm as the annealing temperature is increased to 500degreesC in vacuum. Compared with the results of the ITO films annealed in air, the properties of the films annealed in vacuum is better. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：183 / 188

页数：6

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