Construction and Characterization of Photodiodes prepared with Bi2S3 Nanowires

被引:33
作者
Arumugam, J. [1 ]
George, Amal [1 ]
Raj, A. Dhayal [1 ]
Irudayaraj, A. Albert [1 ]
Josephine, R. L. [2 ]
Sundaram, S. John [1 ]
Al-Mohaimeed, Amal M. [3 ]
Al-onazi, Wedad A. [3 ]
Elshikh, Mohamed Soliman [4 ]
Kaviyarasu, K. [5 ,6 ]
机构
[1] Sacred Heart Coll, Abdul Kalam Res Ctr AKRC, PG & Res Dept Phys, Tirupattur 635601, Tamil Nadu, India
[2] Natl Inst Technol, Dept Elect & Elect Engn, Trichy 620015, Tamil Nadu, India
[3] King Saud Univ, Coll Sci, Dept Chem, POB 22452, Riyadh 11495, Saudi Arabia
[4] King Saud Univ, Coll Sci, Dept Bot & Microbiol, Riyadh 11451, Saudi Arabia
[5] Univ South Africa UNISA, Coll Grad Studies, UNESCO UNISA Africa Chair Nanosci Nanotechnol Lab, POB 392, Pretoria, South Africa
[6] Natl Res Fdn NRF, iThemba LABS, Mat Res Grp MRG, Nanosci African Network NANOAFNET, 1 Old Faure Rd,7129,POB 722, Somerset West, Western Cape Pr, South Africa
关键词
Photodiode; Bi2S3; nanowires; Photocurrent; Bandgap; Orthorhombic structure;
D O I
10.1016/j.jallcom.2021.158681
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This work discloses the characteristics of a Bi2S3 nanowire / ITO photodiode and a manufacture method thereof; wherein, the high-crystalline Bi2S3 nanostructures were prepared by an environmental friendly dip-coating method onto Indium-doped Tin Oxide (ITO) coated glass substrates using bismuth nitrate and thiourea as raw material with DMF as solvent. The XRD spectra showed that the Bi2S3 nanowire exhibits orthorhombic structure, while the SEM images revealed the formation of uniform sized nanowires with diameter around 15.8 nm. The optical bandgap of the films had been estimated via Tauc plot and found to be in the range of 1.85-1.9 eV. In order to understand the I-V characterizations of the prepared diode showed prominent photo-response with a high photo-responsivity of 1.7 mu A/cm(2) with a fast response time were reported in detail. (C) 2021 Elsevier B.V. All rights reserved.
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页数:5
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