A high speed fully self-timed SAR ADC with an on-chip adaptative reference buffer
被引:0
作者:
Zhao, Yifei
论文数: 0引用数: 0
h-index: 0
机构:
Tianjin Univ, Sch Microelect, Tianjin, Peoples R ChinaTianjin Univ, Sch Microelect, Tianjin, Peoples R China
Zhao, Yifei
[1
]
Ye, Mao
论文数: 0引用数: 0
h-index: 0
机构:
Tianjin Univ, Sch Microelect, Tianjin, Peoples R ChinaTianjin Univ, Sch Microelect, Tianjin, Peoples R China
Ye, Mao
[1
]
Gao, Man
论文数: 0引用数: 0
h-index: 0
机构:
Tianjin Univ, Sch Microelect, Tianjin, Peoples R ChinaTianjin Univ, Sch Microelect, Tianjin, Peoples R China
Gao, Man
[1
]
Zhao, Yiqiang
论文数: 0引用数: 0
h-index: 0
机构:
Tianjin Univ, Sch Microelect, Tianjin, Peoples R ChinaTianjin Univ, Sch Microelect, Tianjin, Peoples R China
Zhao, Yiqiang
[1
]
机构:
[1] Tianjin Univ, Sch Microelect, Tianjin, Peoples R China
来源:
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
|
2019年
关键词:
SAR ADC;
fully self-timed;
adaptive reference buffer;
redundancy;
monotonic switching;
D O I:
10.1109/edssc.2019.8753967
中图分类号:
TP3 [计算技术、计算机技术];
学科分类号:
0812 ;
摘要:
This paper presents a 12bit 100Ms/s fully-self timed SAR ADC. A timer circuit is introduced in order to self-time the sub-ADC settlement. Redundancy and monotonic switching techniques are adopted to further enhance the conversion speed. A source follower based high speed reference buffer is included on the chip. To adaptively adjust the drive strength under different PVT condition, a bias current adjustment feedback loop is designed. The proposed SAR ADC is designed with 55nm CMOS process, the active core circuit occupies an area of 560 mu m*320 mu m. The simulated result indicates that 75.2dB SFDR, 70.7dB SNR, 69dB SNDR are achieved.
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相关论文
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Kapusta R, 2013, ISSCC DIG TECH PAP I, V56, P472, DOI 10.1109/ISSCC.2013.6487820