A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories

被引：223

作者：

Lee, Myoung-Jae ^{[1
]}

Seo, Sunae

Kim, Dong-Chirl

Ahn, Seung-Eon

Seo, David H.

Yoo, In-Kyeong

Baek, In-Gyu

Kim, Dong-Sik

Byun, Ik-Su

Kim, Soo-Hong

Hwang, In-Rok

Kim, Jin-Soo

Jeon, Sang-Ho

Park, Bae Ho

机构：

[1] Samsung Adv Inst Technol, Nano Devices Lab, Suwon 440600, South Korea

[2] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

[3] Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Suwon 440600, South Korea

[4] Inha Tech Coll, Dept Syst & Comp Engn, Inchon 402753, South Korea

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 01期

关键词：

D O I：

10.1002/adma.200601025

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A one-diode/one-resistor structure, Pt/NiO/Pt/p-NiOx/n-TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temperature and small cell size, as well as excellent rectifying characteristics, make this Pt/p-NiOx/n-TiOx/Pt diode structure a promising switch element for high-density, nonvolatile memory devices with 3D stack and cross-point structures.

引用

页码：73 / +

页数：5

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