A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories

被引：219
作者：
Lee, Myoung-Jae [1 ]
Seo, Sunae
Kim, Dong-Chirl
Ahn, Seung-Eon
Seo, David H.
Yoo, In-Kyeong
Baek, In-Gyu
Kim, Dong-Sik
Byun, Ik-Su
Kim, Soo-Hong
Hwang, In-Rok
Kim, Jin-Soo
Jeon, Sang-Ho
Park, Bae Ho
机构：
[1] Samsung Adv Inst Technol, Nano Devices Lab, Suwon 440600, South Korea
[2] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
[3] Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Suwon 440600, South Korea
[4] Inha Tech Coll, Dept Syst & Comp Engn, Inchon 402753, South Korea
来源：
ADVANCED MATERIALS | 2007年 / 19卷 / 01期
关键词：
D O I：
10.1002/adma.200601025
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A one-diode/one-resistor structure, Pt/NiO/Pt/p-NiOx/n-TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temperature and small cell size, as well as excellent rectifying characteristics, make this Pt/p-NiOx/n-TiOx/Pt diode structure a promising switch element for high-density, nonvolatile memory devices with 3D stack and cross-point structures.
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页码：73 / +
页数：5
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