Effect of Annealing Temperature of Titanium Dioxide Thin Films on Structural and Electrical Properties

被引：119

作者：

Bakri, A. S. ^{[1
]}

Sandan, M. Z. ^{[1
]}

Adriyanto, F. ^{[1
,2
]}

Raship, N. A. ^{[1
]}

Said, N. D. M. ^{[1
]}

Abdullah, S. A. ^{[1
]}

Rahim, M. S. ^{[1
]}

机构：

[1] Univ Tun Hussein Onn Malaysia, Microelect & Nanotechnol Shamsuddin Res Ctr Mint, Batu Pahat 86400, Johor, Malaysia

[2] Sebelas Maret Univ, Dept Phys, Kota Surakarta, Jawa Tengah, Indonesia

来源：

INTERNATIONAL CONFERENCE ON ENGINEERING, SCIENCE AND NANOTECHNOLOGY 2016 (ICESNANO 2016) | 2017年 / 1788卷

关键词：

SOL-GEL; SILVER NANOPARTICLES; OPTICAL-PROPERTIES; TIO2;

D O I：

10.1063/1.4968283

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Titanium dioxide (TiO2) thin films are deposited on silicon substrates by using sol-gel dip coating technique. Annealing temperature was varied to investigate its effect on the surface morphology, structural and electrical properties of the film The crystalline structure, surface morphology and the electrical properties were investigated by X-ray diffraction, field emission scanning electron microscopy (FESEM), atomic force microscope (AFM), and four point probe. The results show that with an increase in annealing temperature, the value of the intensity of (101) peak increases while the value of the full-width at half maximum decreases. Thin films deposited at high annealing temperatures result in an increase in surface roughness and grain size. The electrical properties of these films show that the resistivity varies between 1.40 x 10(5) and 7.19 x 10(2) Omega cm when the annealing temperature changes from 300 to 900 degrees C, respectively. The TiO2 thin tilms annealed at 900 degrees C exhibited lower resistivity than other tilms, it found that the annealing temperature intluences the surface morphology, structural and electrical properties of TiO2 thin films.

引用

页数：8

共 18 条

[1] Electric properties and surface structure of TiO2 for solar cells [J].