Study of loss mechanisms on Sb2(S1-xSex)3 solar cell with n-i-p structure: Toward an efficiency promotion

In this work, a theoretical study on the impact of loss mechanisms on Sb-2(S1-xSex)(3) solar cells with a 10% certified world record efficiency is presented. In particular, it is found that CdS/Sb-2(S1-xSex)(3) interface recombination is the main loss mechanism, giving rise to a V-oc deficit of almost 50% and a reduction in the efficiency of 45% compared to results obtained under the ideal radiative regimen. Under this mechanism, experimental observations, such as the J-V curve, efficiency, short-circuit current density, open-circuit voltage, fill factor, and external quantum efficiency, are reproduced. Finally, a discussion on the path to further promote device efficiency is presented and discussed.