On the use of a SiGe spike in the emitter to improve the fTxBVCEO product of high-speed SiGeHBTs

被引：7

作者：

Choi, L. J. ^{[1
]}

Van Huylenbroeck, S.

Piontek, A.

Sibaja-Hernandez, A.

Kunnen, E.

Meunier-Beillard, P.

van Noort, W. D.

Hijzen, E.

Decoutere, S.

机构：

[1] Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[2] NXP Semicond Leuven, B-3001 Louvain, Belgium

[3] NXP Semicond, Hopewell Jct, NY 12533 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 04期

关键词：

Auger recombination; base current; heterojunction bipolar transistor (HBT); mono-emitter; poly-emitter; semiconductor device breakdown; silicon-germanium (SiGe);

D O I：

10.1109/LED.2007.892366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aggressive vertical scaling of SiGe HBTs has yielded impressive values for the cut-off frequencies (f(T)), but these HBTs often suffer from too high current gains. This leads to low values for the open-base breakdown voltage (BV(CEO)). In this letter we demonstrate the use of a SiGe spike in the emitter as a practical method to increase the base current. Hence, the breakdown voltage is increased. At the same time, the device RF performance is not affected, which leads to a significant improvement in the f(T)xBV(CEO) product.

引用

页码：270 / 272

页数：3

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