Diameter-dependent electrical transport properties of bismuth nanowire arrays

被引：36

作者：

Li, Liang ^{[1
]}

Yang, Youwen ^{[1
]}

Fang, Xiaosheng ^{[1
]}

Kong, Mingguang ^{[1
]}

Li, Guanghai ^{[1
]}

Zhang, Lide ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanotechnol, Inst Solid State Phys, Hefei 230031, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2007年 / 141卷 / 09期

基金：

中国国家自然科学基金;

关键词：

bismuth; electrical resistance; pulsed electrodeposition; nanowire array; NANOTUBE ARRAYS;

D O I：

10.1016/j.ssc.2006.12.012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Single-crystalline bismuth nanowire arrays with different diameters were fabricated within porous anodic alumina membranes with the same pore size using the pulsed electro-deposition technique. X-ray diffraction measurements show that the as-synthesized nanowires have a highly preferential orientation. Scanning electron microscopy, transmission electron microscopy and high-resolution transmission electron microscopy analyses indicate that bismuth nanowire arrays are high filling, ordered and single-crystalline. Electrical resistance measurements show that the bismuth nanowires have a metal-semiconductor transition when the diameters decrease from 90 to 50 nm, and the resistance behaviors are explained on the basis of the quantum confinement effect and Matthiessen's rule. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：492 / 496

页数：5

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