Interface characteristics comparison of sapphire direct and indirect wafer bonded structures by transmission electron microscopy

被引：9

作者：

Li, Wangwang ^{[1
]}

Liang, Ting ^{[1
]}

Liu, Wenyi ^{[1
]}

Lei, Cheng ^{[1
]}

Hong, Yingping ^{[1
]}

Li, Yongwei ^{[1
]}

Li, Zhiqiang ^{[1
]}

Xiong, Jijun ^{[1
]}

机构：

[1] North Univ China, Sci & Technol Elect Test & Measurement Lab, Taiyuan 030051, Shanxi, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2019年 / 494卷

关键词：

Sapphire; Wafer bonding; Bonding interface; Plasma-activation; High temperature; SILICON; FILMS; ULTRAVIOLET; GERMANIUM; SURFACE; VACUUM; OXIDE;

D O I：

10.1016/j.apsusc.2019.07.130

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we demonstrate a hydrophilic sapphire wafer bonding method combining plasma-activation and high-temperature bonding process. It is successfully employed in two sapphire bonding structures, including sapphire direct bonding and sapphire indirect bonding based on an intermediate amorphous Al2O3 (a-Al2O3). Transmission electron microscopy (TEM) results show that the a-Al2O3 turns to be the single crystalline phase due to the induction of the sapphire substrate after high temperature bonding at 1000 degrees C. Moreover, high bonding strength is achieved for sapphire/sapphire (9.91 MPa) and sapphire/Al2O3/sapphire (17.96 MPa) structures and exceeds that of the bulk sapphire. This sapphire bonded structure with cavity can be applied to fabricate optical devices and pressure and temperature sensors for extreme high temperature environments.

引用

页码：566 / 574

页数：9

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