Surface reconstructions and faceting of the Ga/Ge(113) system

被引:0
作者
Gai, Z
Zhao, RG
Gao, B
Ji, H
Yang, WS
机构
[1] BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA
[2] BEIJING UNIV,MESOSCOP PHYS LAB,BEIJING 100871,PEOPLES R CHINA
基金
中国国家自然科学基金;
关键词
faceting; gallium; germanium; high index single crystal surfaces; low-energy electron diffraction; metal-semiconductor interfaces; scanning tunneling microscopy; surface reconstruction;
D O I
10.1016/S0039-6028(97)00106-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Surfaces of the Ga/Ge(113) system have been studied by means of low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). It has been found that the only two reconstructions of the system, i.e., ((8)(-1)(5)(1)) and ''1 x 2'', consist of the same (I x 2)-like building blocks and, hence have only slightly different coverages. Coexisting with the reconstructions are small (112) and (115) facets, which develop through bunching of steps. On the basis of LEED patterns and STM images and under the guidance of the common characteristics of surface structures of III/IV systems, structural models have been proposed for these reconstructions and the (112) facets for further investigation. It has been noticed that only small percentages of a monolayer of Ga can make the Ge(113) surface entirely 3 x1; otherwise it contains a great many small 3 x2 patches scattered inside large 3 x1 domains. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:1 / 12
页数:12
相关论文
共 30 条
[1]   MICROSCOPIC STRUCTURE OF THE DISCOMMENSURATE PHASES IN GE(111)/GA .1. ATOMIC-STRUCTURE WITHIN DOMAINS [J].
ARTACHO, E ;
MOLINASMATA, P ;
BOHRINGER, M ;
ZEGENHAGEN, J ;
FRANKLIN, GE ;
PATEL, JR .
PHYSICAL REVIEW B, 1995, 51 (15) :9952-9964
[2]   DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY [J].
BECKER, RS ;
SWARTZENTRUBER, BS ;
VICKERS, JS ;
KLITSNER, T .
PHYSICAL REVIEW B, 1989, 39 (03) :1633-1647
[3]   MICROSCOPIC STRUCTURE OF THE DISCOMMENSURATE PHASES IN GE(111)/GA .2. DOMAIN SUPERSTRUCTURE AND DISCOMMENSURATIONS [J].
BOHRINGER, M ;
MOLINASMATA, P ;
ARTACHO, E ;
ZEGENHAGEN, J .
PHYSICAL REVIEW B, 1995, 51 (15) :9965-9972
[4]   ADSORPTION OF AL ON SI(100) - A SURFACE POLYMERIZATION REACTION [J].
BROCKS, G ;
KELLY, PJ ;
CAR, R .
PHYSICAL REVIEW LETTERS, 1993, 70 (18) :2786-2789
[5]   ATOMIC-STRUCTURE OF CLEAN SI(113) SURFACES - THEORY AND EXPERIMENT [J].
DABROWSKI, J ;
MUSSIG, HJ ;
WOLFF, G .
PHYSICAL REVIEW LETTERS, 1994, 73 (12) :1660-1663
[6]   MICROSCOPIC PICTURE OF SI(113) - A NOVEL SURFACE RECONSTRUCTION, THE ORIGIN OF DEFECTS, AND THE PROCESS OF ADSORPTION - THEORETICAL AND EXPERIMENTAL-STUDY [J].
DABROWSKI, J ;
MUSSIG, HJ ;
WOLFF, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1597-1601
[7]   A NOVEL SURFACE RECONSTRUCTION - SUBSURFACE INTERSTITIALS STABILIZE SI(113)3X2 [J].
DABROWSKI, J ;
MUSSIG, HJ ;
WOLFF, G .
SURFACE SCIENCE, 1995, 331 :1022-1027
[8]   Chemisorption of group-III metals on the (111) surface of group-IV semiconductors: In/Ge(111) [J].
Gai, Z ;
Zhao, RG ;
He, Y ;
Ji, H ;
Hu, C ;
Yang, WS .
PHYSICAL REVIEW B, 1996, 53 (03) :1539-1547
[9]   Adatom diffusion on Ge(111) and the corresponding activation energy barrier [J].
Gai, Z ;
Yu, HB ;
Yang, WS .
PHYSICAL REVIEW B, 1996, 53 (20) :13547-13550
[10]   (310)-FACETING OF THE GE(001)2X1 SURFACE-INDUCED BY INDIUM [J].
GAI, Z ;
JI, H ;
HE, Y ;
HU, C ;
ZHAO, RG ;
YANG, WS .
SURFACE SCIENCE, 1995, 338 (1-3) :L851-L856