A figure of merit for the evaluation of long term memory effects in RF power amplifiers

被引：1

作者：

Martins, Joao Paulo ^{[1
]}

Carvalho, Nuno Borges ^{[1
]}

Pedro, Jose Carlos ^{[1
]}

机构：

[1] Univ Aveiro, Inst Telecomunicacoes, P-3800 Aveiro, Portugal

来源：

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年

关键词：

power amplifiers; nonlinear systems; long term memory;

D O I：

10.1109/MWSYM.2006.249957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a long term memory effect figure of merit, FOM, that can be easily measured in a microwave laboratory and has a simple interpretation in the power amplifier, PA, linearization field. For that, a brief explanation of the long term memory effects' origins in a RF PA is first presented, and then, the concept of the optimum memoryless PA linearizer is introduced. This is used to define a FOM capable of classifying PAs from a slow dynamics perspective.

引用

页码：1109 / +

页数：2

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