Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

被引：10

作者：

Nowak, A. K. ^{[1
]}

Gallardo, E. ^{[1
]}

Sarkar, D. ^{[1
,2
]}

van der Meulen, H. P. ^{[1
]}

Calleja, J. M. ^{[1
]}

Ripalda, J. M. ^{[3
]}

Gonzalez, L. ^{[3
]}

Gonzalez, Y. ^{[3
]}

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[3] CSIC, Ctr Nacl Microelect, Inst Microelect Madrid, E-28760 Madrid, Spain

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 16期

关键词：

EXCITONS; SPECTROSCOPY; EMISSION;

D O I：

10.1103/PhysRevB.80.161305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present second-order photon correlation measurements on single InP/(Ga,In)P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g((2))(0) below 0.25 up to 45 K. The antibunching time tau(R) increases or decreases with temperature depending on the quantum-dot size. The two trends result from a competition between hole thermal excitation and dark-to-bright exciton transitions. The former prevails in smaller dots showing increasing tau(R) with temperature, while the latter dominates in larger quantum dots showing decreasing tau(R) with temperature.

引用

页数：4

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