Characterization of diamond ultraviolet detectors fabricated with high-quality single-crystalline chemical vapor deposition films

被引：36
|
作者：
Iwakaji, Y. [1 ]
Kanasugi, M. [1 ]
Maida, O. [1 ]
Ito, T. [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Div Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 22期
基金：
日本学术振兴会;
关键词：
boron; diamond; doping profiles; epitaxial layers; high-pressure effects; high-temperature effects; plasma CVD; ultraviolet detectors; X-RAY DETECTORS; CVD DIAMOND; PERFORMANCE; BORON;
D O I：
10.1063/1.3143621
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated high-performance ultraviolet (UV) detectors with high-quality undoped and B-doped homoepitaxial diamond layers which were sequentially grown on a high-pressure/high-temperature-synthesized (HPHT) type-Ib (100) substrate by means of a high-power microwave-plasma chemical vapor deposition method. The detector performance measured had large quantum efficiencies due to an effective built-in current amplification function, fast temporal responses, and high UV/visible sensing ratios although the HPHT substrate used had considerable amounts of various defects inducing visible light absorptions and slow detector responses. The usefulness of the bilayer detector structure employed is discussed.
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页数：3
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