The structure of TiN films deposited by arc ion plating

The relationship between deposition conditions of TiN film deposited by arc ion plating and the resultant structure was investigated by X-ray diffraction. Bias voltage was varied systematically in order to clarify the effect of such a variation on the final structure of TiN films. At low bias voltage, the resultant TiN film exhibited strong {110} preferred orientation, whereas at high bias voltage, the dominant orientation of the film was {111}. The ratio of nitrogen, carbon, and oxygen to titanium at the film surface and the interface between the film and substrate was determined by X-ray photoelectron spectroscopy (XPS), revealing that the maximum N/Ti ratio is approximately 0.89 in TiN films that exhibit {110} and {111} preferred orientation on the film surface. Titanium oxides such as TiO2 or TiO were observed at the interface between the film and substrate in {110} oriented films, however these oxides were not observed in {111} orientated films. (C) 2002 Elsevier Science Ltd. All rights reserved.