Direct epitaxial CVD synthesis of tungsten disulfide on epitaxial and CVD graphene

被引:43
作者
Bianco, G. V. [1 ]
Losurdo, M. [1 ]
Giangregorio, M. M. [1 ]
Sacchetti, A. [1 ]
Prete, P. [2 ]
Lovergine, N. [3 ]
Capezzuto, P. [1 ]
Bruno, G. [1 ]
机构
[1] Univ Bari, Dept Chem, Inst Nanotechnol, CNR NANOTEC, I-70126 Bari, Italy
[2] UOS Lecce, CNR, Inst Microelect & Microsyst, I-73100 Lecce, Italy
[3] Univ Salento, Dept Innovat Engn, I-73100 Lecce, Italy
关键词
DER-WAALS EPITAXY; TRANSITION-METAL DICHALCOGENIDES; QUALITY MONOLAYER WS2; LARGE-AREA; LAYER MOS2; OPTICAL-PROPERTIES; ATOMIC LAYERS; GROWTH; MONO; PHOTOLUMINESCENCE;
D O I
10.1039/c5ra19698a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The direct chemical vapor deposition of WS2 by W(CO)(6) and elemental sulfur as precursors onto epitaxial-graphene on SiC and CVD-graphene transferred on SiO2/Si substrate is presented. This methodology allows the epitaxial growth of continuous WS2 films with a homogeneous and narrow photoluminescence peak without inducing stress or structural defects in the graphene substrates. The control of the WS2 growth dynamics for providing the localized sulfide deposition by tuning the surface energy of the graphene substrates is also demonstrated. This growth methodology opens the way towards the direct bottom up fabrication of devices based on TMDCs/graphene van der Waals heterostructures.
引用
收藏
页码:98700 / 98708
页数:9
相关论文
共 52 条
  • [21] Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
    Kretinin, A. V.
    Cao, Y.
    Tu, J. S.
    Yu, G. L.
    Jalil, R.
    Novoselov, K. S.
    Haigh, S. J.
    Gholinia, A.
    Mishchenko, A.
    Lozada, M.
    Georgiou, T.
    Woods, C. R.
    Withers, F.
    Blake, P.
    Eda, G.
    Wirsig, A.
    Hucho, C.
    Watanabe, K.
    Taniguchi, T.
    Geim, A. K.
    Gorbachev, R. V.
    [J]. NANO LETTERS, 2014, 14 (06) : 3270 - 3276
  • [22] Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures
    Larentis, Stefano
    Tolsma, John R.
    Fallahazad, Babak
    Dillen, David C.
    Kim, Kyounghwan
    MacDonald, Allan H.
    Tutuc, Emanuel
    [J]. NANO LETTERS, 2014, 14 (04) : 2039 - 2045
  • [23] Size-dependent structure of MoS2 nanocrystals
    Lauritsen, Jeppe V.
    Kibsgaard, Jakob
    Helveg, Stig
    Topsoe, Henrik
    Clausen, Bjerne S.
    Laegsgaard, Erik
    Besenbacher, Flemming
    [J]. NATURE NANOTECHNOLOGY, 2007, 2 (01) : 53 - 58
  • [24] Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2
    Lee, Dong Su
    Riedl, Christian
    Krauss, Benjamin
    von Klitzing, Klaus
    Starke, Ulrich
    Smet, Jurgen H.
    [J]. NANO LETTERS, 2008, 8 (12) : 4320 - 4325
  • [25] Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces
    Lee, Yi-Hsien
    Yu, Lili
    Wang, Han
    Fang, Wenjing
    Ling, Xi
    Shi, Yumeng
    Lin, Cheng-Te
    Huang, Jing-Kai
    Chang, Mu-Tung
    Chang, Chia-Seng
    Dresselhaus, Mildred
    Palacios, Tomas
    Li, Lain-Jong
    Kong, Jing
    [J]. NANO LETTERS, 2013, 13 (04) : 1852 - 1857
  • [26] Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
    Lee, Yi-Hsien
    Zhang, Xin-Quan
    Zhang, Wenjing
    Chang, Mu-Tung
    Lin, Cheng-Te
    Chang, Kai-Di
    Yu, Ya-Chu
    Wang, Jacob Tse-Wei
    Chang, Chia-Seng
    Li, Lain-Jong
    Lin, Tsung-Wu
    [J]. ADVANCED MATERIALS, 2012, 24 (17) : 2320 - 2325
  • [27] Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2
    Li, Yilei
    Chernikov, Alexey
    Zhang, Xian
    Rigosi, Albert
    Hill, Heather M.
    van der Zande, Arend M.
    Chenet, Daniel A.
    Shih, En-Min
    Hone, James
    Heinz, Tony F.
    [J]. PHYSICAL REVIEW B, 2014, 90 (20)
  • [28] Direct Synthesis of van der Waals Solids
    Lin, Yu-Chuan
    Lu, Ning
    Perea-Lopez, Nestor
    Li, Jie
    Lin, Zhong
    Peng, Xin
    Lee, Chia Hui
    Sun, Ce
    Calderin, Lazaro
    Browning, Paul N.
    Bresnehan, Michael S.
    Kim, Moon J.
    Mayer, Theresa S.
    Terrones, Mauricio
    Robinson, Joshua A.
    [J]. ACS NANO, 2014, 8 (04) : 3715 - 3723
  • [29] Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
    Liu, Keng-Ku
    Zhang, Wenjing
    Lee, Yi-Hsien
    Lin, Yu-Chuan
    Chang, Mu-Tung
    Su, ChingYuan
    Chang, Chia-Seng
    Li, Hai
    Shi, Yumeng
    Zhang, Hua
    Lai, Chao-Sung
    Li, Lain-Jong
    [J]. NANO LETTERS, 2012, 12 (03) : 1538 - 1544
  • [30] Atomically Thin MoS2: A New Direct-Gap Semiconductor
    Mak, Kin Fai
    Lee, Changgu
    Hone, James
    Shan, Jie
    Heinz, Tony F.
    [J]. PHYSICAL REVIEW LETTERS, 2010, 105 (13)