Dependence of Current on Porous Layer Structure during Anodization of n-InP in Aqueous KOH Electrolytes

被引:2
|
作者
Lynch, Robert P. [1 ]
Quill, Nathan [1 ]
O'Dwyer, Colm [1 ]
Buckley, D. Noel [1 ]
机构
[1] Univ Limerick, Mat & Surface Sci Inst, Limerick, Ireland
关键词
ANODIC FORMATION; PORE FORMATION; GAAS; PHOTOLUMINESCENCE; MECHANISM; SILICON;
D O I
10.1149/05037.0191ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We have performed a computer simulation of the current during anodization of InP in aqueous KOH electrolyte based on the spatial characteristics of the porous structures that are formed. Specifically, we have developed a model, based on the expansion and merging of the porous domains and compared current densities during linear potential sweep and potentiostatic experiments to their respective simulated current-density data. Furthermore, we have compared the expected pore structure at particular stages of etching with corresponding micrographs. From these investigations we are able to demonstrate how the porous structure influences the observed current density.
引用
收藏
页码:191 / 203
页数:13
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