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- [1] Effect of Current Density on Pore Formation in n-InP in KOH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6, 2013, 58 (08): : 25 - 38
- [3] Current-Line Oriented Pore Formation in n-InP Anodized in KOH PITS AND PORES 5: A SYMPOSIUM IN HONOR OF DAVID LOCKWOOD, 2013, 50 (37): : 143 - 153
- [6] ELECTROCHEMICAL TECHNIQUES FOR THE ELUCIDATION OF THE INTERFACE STRUCTURE OF THE N-INP/AQUEOUS ELECTROLYTE JUNCTION JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1994, 365 (1-2): : 283 - 287
- [7] Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density IEICE ELECTRONICS EXPRESS, 2014, 11 (14):
- [8] The current-voltage characteristics of photodiodes of the planar type FPA based on p-InP/InGaAs/n-InP structure 1600, Federal Informational-Analytical Center of the Defense Industry
- [9] Electrical Parameters and Current Conduction Mechanism in Cr/Au/n-InP Schottky Structure at Different Annealing Temperatures PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS), 2015, 1665