Bilayer resist method for room-temperature nanoimprint lithography

被引：35
|
作者：
Nakamatsu, K
Watanabe, K
Tone, K
Katase, T
Hattori, W
Ochiai, Y
Matsuo, T
Sasago, M
Namatsu, H
Komuro, M
Matsui, S
机构：
[1] Himeji Inst Technol, LASTI, Grad Sch Sci, Kamigori, Hyogo 6781205, Japan
[2] Meisyo Co, Hikami, Hyougo, Japan
[3] NEC Fundamental Res Labs, Tsukuba, Ibaraki 3058051, Japan
[4] Matsushita Elect Ind Co, Minami Ku, Kyoto 6018413, Japan
[5] NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[6] AIST, Adv Semicond Res Ctr, Tsukuba, Ibaraki 3058501, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 6B期
关键词：
nanoimprint; lithography; HSQ; bilayer; high aspect resist patterns;
D O I：
10.1143/JJAP.43.4050
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A compact nanoimprint lithography (NIL) apparatus using the driving power of a servomotor has been newly developed. A bilayer resist method using hydrogen silsequioxane (HSQ) as a top layer and AZ photoresist as a bottom layer has been proposed to achieve high-aspect resist patterns on a nonflat surface for room-temperature nanoimprint lithography (RT-NIL). The etching rate ratio of HSQ to AZ photoresist was higher than 100 for O-2 reactive ion etching (RIE), indicating that the HSQ top layer has sufficient etching tolerance. We have achieved the high-aspect nanostructure patterns of 100-nm-linewidth and 1-mum-height using the NIL apparatus developed here.
引用
收藏
页码：4050 / 4053
页数：4
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