Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy

被引：19

作者：

Li, Huijie ^{[1
,2
]}

Liu, Xianglin ^{[1
,2
]}

Sang, Ling ^{[1
,2
]}

Wang, Jianxia ^{[1
,2
]}

Jin, Dongdong ^{[1
,2
]}

Zhang, Heng ^{[1
,2
]}

Yang, Shaoyan ^{[1
,2
]}

Liu, Shuman ^{[1
,2
]}

Mao, Wei ^{[3
]}

Hao, Yue ^{[3
]}

Zhu, Qinsheng ^{[1
,2
]}

Wang, Zhanguo ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Inst Semicond, Beijing 100083, Peoples R China

[3] Xidian Univ, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2014年 / 251卷 / 04期

基金：

美国国家科学基金会;

关键词：

polarization; semiconductor heterojunctions; valence-band offsets; X-ray photoelectron spectroscopy; PHOTOEMISSION-SPECTROSCOPY; GAN; ALN; DISCONTINUITY;

D O I：

10.1002/pssb.201350199

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have directly measured the valence-band offsets (VBOs) of wurtzite C-plane and A-plane AlN/GaN heterojunctions by X-ray photoelectron spectroscopy. The VBOs were determined to be 0.82 +/- 0.15 and 0.63 +/- 0.15eV for the C-plane and A-plane AlN/GaN heterojunctions, respectively. The discrepancy in VBOs of heterojunctions with different orientations is mainly due to the spontaneous polarization effect. The VBO of the nonpolar heterojunction is closer to the intrinsic value since the A-plane samples show no polarization effects.

引用

页码：788 / 791

页数：4

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