Integration of CMOS Front-end Circuits with Silicon Photonic Devices for High Speed PAM-4 Optical Links

被引：0
|
作者：
Hsu, Shawn S. H. [1 ]
Li, Yan-Feng [1 ]
Wang, Hao-Ju [1 ]
Chen, Tai-Chun [1 ]
Tseng, Chih-Kuo [1 ]
Lee, Ming-Chang [1 ]
Li, Ke [2 ]
Thomson, David J. [2 ]
Reed, Graham T. [2 ]
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan
[2] Univ Southampton, Optoelect Res Ctr, Southampton, Hants, England
来源：
2017 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2017年
基金：
英国工程与自然科学研究理事会;
关键词：
Optical link; PAM-4; CMOS; transimpedance amplifier (TIA); modulator driver (MD); silicon photonics; TECHNOLOGY; AMPLIFIER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents our recent studies on CMOS front-end circuits for high speed optical links. The circuit topologies of both transimpedance amplifier (TIA) and modulator driver (MD) are discussed for achieving wideband operation in PAM-4 modulation using advanced CMOS technology. Also, issues of integration of the circuits with silicon photonic devices such as the Ge-on-Si photo diode (PD) and silicon modulator are addressed for high performance silicon-based transceiver front-end of optical link.
引用
收藏
页码：250 / 252
页数：3
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