Microwave synthesis and sintering of TiNiSn thermoelectric bulk

被引:39
作者
Lei, Ying [1 ,3 ]
Li, Yu [1 ]
Xu, Lin [1 ]
Yang, Junyou [2 ,3 ]
Wan, Rundong [4 ]
Long, Hongming [1 ]
机构
[1] Anhui Univ Technol, Sch Met Engn, Maanshan 243002, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, Wuhan 430074, Peoples R China
[3] Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
[4] Kunming Univ Sci & Technol, Inst Mat Sci & Engn, Kunming 650093, Peoples R China
基金
中国国家自然科学基金;
关键词
TiNiSn; Microwave synthesis; Microwave sintering; Nano inclusions; Thermoelectric properties; HALF-HEUSLER; INTERMETALLIC COMPOUNDS; TEMPERATURE; PERFORMANCE; COMPOSITES; ZRNISN; CONDUCTIVITY; PHASE;
D O I
10.1016/j.jallcom.2015.11.089
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nano-structured Half-Heusler TiNiSn thermoelectric bulk was prepared by microwave-assisted rapid solid-state synthesis and sintering. The mixture of powders of Ti, Ni, Sn was cold pressed before being heated by microwave irradiation. A microwave susceptor material rapidly heats the elemental starting materials inside an evacuated quartz tube resulting in near single phase compounds in 4 min 20 s. The synthesized sample was milled for 30 min in an agate mortar and cold pressed for the following sintering. An 86% density of TiNiSn thermoelectric bulk contains similar to 100 nm pore and nanocrystal was sintered in 20 min. For TiNiSn bulk, low thermal conductivity of 2-3 W/m.K at temperatures in the range of the room temperature to 773 K. The ZT values of around 0.3 are found, with the microwave-prepared sample displaying noticeable superior properties over conventionally prepared half-Heuslers due to inclusion of nanopore and In-situ nanocrystal. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:166 / 170
页数:5
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