Wide and Extreme Bandgap Semiconductor Devices for Power Electronics Applications

被引：0
作者：
Chow, T. Paul [1 ]
机构：
[1] Rensselaer Polytech Inst, Troy, NY 12180 USA
来源：
2014 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) | 2014年
关键词：
4H-SiC; 2H-GaN; AlN; diamond; power rectifiers; power transistors; VOLTAGE; KV;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present status of the research, development and commercialization of wide (SiC, GaN) and extreme (diamond, AlN) bandgap semiconductor devices for power electronics applications is presented. The technology obstacles and needs as well as future trend in these power devices are also discussed.
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页数：4
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