Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si

被引：28

作者：

Shang, Chen ^{[1
]}

Wang, Yating ^{[2
]}

Norman, Justin C. ^{[1
]}

Collins, Noelle ^{[3
]}

MacFarlane, Ian ^{[3
]}

Dumont, Mario ^{[3
]}

Liu, Songtao ^{[2
]}

Li, Qiang ^{[4
]}

Lau, Kei M. ^{[4
]}

Gossard, Arthur C. ^{[1
]}

Bowers, John E. ^{[2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[4] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2019年 / 25卷 / 06期

关键词：

Integrated optoelectronics; quantum dots; wafer; scale integration;

D O I：

10.1109/JSTQE.2019.2927581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm(2), a maximum operating temperature of 80 degrees C, and a maximum 3-dB band-width of 5.8 GHz was achieved for 1.3-mu m InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by the reduced threading dislocation density (from 7 x 10(7) to 3 x 10(6) cm(-2)), and optimized probe design. The patterned Si produced antiphase domain free material in the coalesced GaAs buffer layer with reduced misfit/threading dislocation nucleation, without the use of Ge/GaP buffers or substrate miscut. Utilizing aspect ratio trapping, cyclic thermal annealing, and dislocation filter layers, high-quality III-V on Si devices were grown, demonstrating the compelling advantages of this patterned Si template for a monolithic Si photonics integration platform.

引用

页数：7

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