Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si

被引：27
|
作者：
Shang, Chen [1 ]
Wang, Yating [2 ]
Norman, Justin C. [1 ]
Collins, Noelle [3 ]
MacFarlane, Ian [3 ]
Dumont, Mario [3 ]
Liu, Songtao [2 ]
Li, Qiang [4 ]
Lau, Kei M. [4 ]
Gossard, Arthur C. [1 ]
Bowers, John E. [2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA
[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[4] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2019年 / 25卷 / 06期
关键词：
Integrated optoelectronics; quantum dots; wafer; scale integration;
D O I：
10.1109/JSTQE.2019.2927581
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm(2), a maximum operating temperature of 80 degrees C, and a maximum 3-dB band-width of 5.8 GHz was achieved for 1.3-mu m InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by the reduced threading dislocation density (from 7 x 10(7) to 3 x 10(6) cm(-2)), and optimized probe design. The patterned Si produced antiphase domain free material in the coalesced GaAs buffer layer with reduced misfit/threading dislocation nucleation, without the use of Ge/GaP buffers or substrate miscut. Utilizing aspect ratio trapping, cyclic thermal annealing, and dislocation filter layers, high-quality III-V on Si devices were grown, demonstrating the compelling advantages of this patterned Si template for a monolithic Si photonics integration platform.
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页数：7
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