Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy

被引：15

作者：

Ivanov, SV ^{[1
]}

Lyublinskaya, OG ^{[1
]}

Vasilyev, YB ^{[1
]}

Kaygorodov, VA ^{[1
]}

Sorokin, SV ^{[1
]}

Sedova, IV ^{[1
]}

Solov'ev, VA ^{[1
]}

Meltser, BY ^{[1
]}

Sitnikova, AA ^{[1
]}

L'vova, TV ^{[1
]}

Berkovits, VL ^{[1
]}

Toropov, AA ^{[1
]}

Kop'ev, PS ^{[1
]}

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 23期

关键词：

D O I：

10.1063/1.1759777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Asymmetric (6.7-300)-nm-thick InAs quantum wells (QWs) confined between AlAsSb and CdMgSe barriers have been fabricated by molecular-beam epitaxy. A special procedure of the CdMgSe-on-InAs growth initiation, exploiting an ex situ S passivation of InAs and in situ deposition of an ultrathin ZnTe buffer layer, results in the fabrication of high quality structures with a density of extended defects below 10(6) cm(2). QW photoluminescence studies demonstrate a confinement effect and confirm the type I band alignment at the heterovalent InAs/CdMgSe interface mediated by the ZnTe interlayer. Observation of Shubnikov de Haas oscillations of magnetoresistance for an asymmetric 19-nm-thick InAs QW indicates an existence of the two-dimensional electron gas with the low-temperature sheet electron density of 1.3x10(12) cm(-2) and the mobility as high as similar to10 000 cm(2)/V s. (C) 2004 American Institute of Physics.

引用

页码：4777 / 4779

页数：3

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