Lateral-Zigzag PN Junction Enabled High-Efficiency Silicon Micro-Ring Modulator Working at 100Gb/s

被引：22

作者：

Cai, Hongjun ^{[1
]}

Fu, Sidong ^{[1
]}

Yu, Yu ^{[1
]}

Zhang, Xinliang ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2022年 / 34卷 / 10期

基金：

中国国家自然科学基金;

关键词：

High-efficiency; optical modulation; P-N junctions; silicon modulators; MACH-ZEHNDER MODULATOR; POWER; COMPACT; ENERGY;

D O I：

10.1109/LPT.2022.3170554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose and demonstrate a novel lateral-zigzag PN junction for silicon modulator working in C and O bands. The designed PN junction exhibits characteristics of large bandwidth, high modulation efficiency, and easy fabrication. For demonstration, it is embedded in a 220 nm silicon rib waveguide on a 2 mu m thick buried oxide layer to form a micro-ring modulator. The measured 3 dB electro-optic bandwidth of the fabricated modulator is 42 GHz while the resistor-capacitor (RC) bandwidth is measured and calculated to be 174 GHz. Clear and open eye diagrams are obtained for 50 Gb/s non-return zero (NRZ) and 100 Gb/s four-level pulse amplitude modulation (PAM4) signals. The modulation power consumption is only 14 fj/bit.

引用

页码：525 / 528

页数：4

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