Vertical SnSe nanorod arrays: from controlled synthesis and growth mechanism to thermistor and photoresistor

被引:65
作者
Cao, Jinli [1 ,2 ]
Wang, Zhenxing [1 ]
Zhan, Xueying [1 ]
Wang, Qisheng [1 ]
Safdar, Muhammad [1 ]
Wang, Yajun [1 ]
He, Jun [1 ]
机构
[1] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
tin selenide; thermistor; negative temperature coefficient resistance; photoresponse; vertical growth; ZNO NANOWIRE ARRAYS; PHOTORESPONSE PROPERTIES; OPTICAL-PROPERTIES; TIN(II) SELENIDE; PHOTODETECTORS; NANOCRYSTALS; ENERGY;
D O I
10.1088/0957-4484/25/10/105705
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We demonstrate that high-quality vertically aligned SnSe nanorod (NR) arrays have been synthesized via a facile chemical vapor deposition method on SiO2 substrates using Bi powder as catalysts. Both SEM and TEM measurements reveal that this kind of SnSe NR consists of a one-dimensional core and dense two-dimensional branches. Thermistors and photoresistors have been fabricated in situ by directly depositing silver paint on the growth substrates. The thermistor shows the great merits of a broad temperature range (77-390) K, linear input-output characteristic, suitable thermal index and high sensitivity. The photoresistor device exhibits relatively fast response time, linear input-output, high reversibility and stability. In addition, both of the devices have the advantages of low cost, environment-friendliness and easy fabrication. The high performance of SnSe thermistors and photodetectors will make SnSe material promising in industrial multi-function nanodevices.
引用
收藏
页数:8
相关论文
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