A new validated physically based IGCT model for circuit simulation of snubberless and series operation

被引：12

作者：

Kuhn, H ^{[1
]}

Schröder, D

机构：

[1] Siemens AG, Automat & Drives, D-90441 Nurnberg, Germany

[2] Tech Univ Munich, Inst Elect Drive Syst, D-80333 Munich, Germany

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2002年 / 38卷 / 06期

关键词：

integrated gate-commutated thyristor (IGCT) model; series connection; snubberless operation;

D O I：

10.1109/TIA.2002.804757

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper deals with a new physically based model for the circuit simulation, which is implemented in Saber MAST, to calculate the static and dynamic behavior of integrated gate-commutated thyristor (IGCT) devices correctly. The model is verified by comparing simulation with experimental results of a 4.5-kV/3-kA IGCT in hard-switch snubberless operation. Furthermore, simulation results of two series-connected IGCT switches are analyzed, in particular, concerning the problem of nonsymmetrically distributed blocking voltages between the switches if snubbers are omitted due to inevitably existent differences concerning the exact device properties and the gate drives, respectively. An idea for dimensioning the snubber capacity is given.

引用

页码：1606 / 1612

页数：7

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