Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ > 2.5 μm

被引：81

作者：

Shterengas, L ^{[1
]}

Belenky, GL

Kim, JG

Martinelli, RU

机构：

[1] SUNY Stony Brook, Stony Brook, NY 11974 USA

[2] Sarnoff Corp, Princeton, NJ 08543 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 05期

关键词：

D O I：

10.1088/0268-1242/19/5/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82 mum In(Al)GaASSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to lambda = 2.82 mum. An approach to extend the wavelength of In(Al)GaASSb/GaSb diode lasers beyond 3 mum is discussed.

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页码：655 / 658

页数：4

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