One-Step Green Hydrothermal Synthesis of Few-Layer Graphene Oxide from Humic Acid

被引:33
作者
Huang, Guangxu [1 ,2 ,3 ]
Kang, Weiwei [4 ]
Geng, Qianhao [1 ]
Xing, Baolin [1 ,5 ]
Liu, Quanrun [1 ]
Jia, Jianbo [1 ]
Zhang, Chuanxiang [1 ]
机构
[1] Henan Polytech Univ, Coll Chem & Chem Engn, Jiaozuo 454003, Peoples R China
[2] Collaborat Innovat Ctr Coal Work Safety Henan Pro, Jiaozuo 454003, Peoples R China
[3] Henan Key Lab Coal Green Convers, Jiaozuo 454003, Peoples R China
[4] Southeast Univ, Sch Chem & Chem Engn, Nanjing 211189, Jiangsu, Peoples R China
[5] Zhengzhou Univ, Henan Prov Ind Technol Res Inst Resources & Mat, Zhengzhou 450001, Henan, Peoples R China
基金
中国国家自然科学基金;
关键词
graphene oxide; hydrothermal treatment; hydrolysis; humic acid; supercapacitor; FACILE SYNTHESIS; GRAPHITE OXIDE; QUANTUM DOTS; SUPERCAPACITOR; PERFORMANCE; COMPOSITE; CARBON; NANOSHEETS; ELECTRODE; GROWTH;
D O I
10.3390/nano8040215
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The conventional synthesis route of graphene oxide (GOG), based on Hummers method, suffers from explosion risk, environmental concerns and a tedious synthesis process, which increases production costs and hinders its practical applications. Herein, we report a novel strategy for preparing few-layer graphene oxide (GOH) from humic acid via simple hydrothermal treatment. The formation of GO(H) is mainly attributed to the hydrolysis, oxidation and aromatization of humic acid under hydrothermal conditions. The as-prepared few-layer GO(H) has typical morphology (thin and crumpled sheets with the thickness of similar to 3.2 nm), crystal structure (a Raman I-D/I-G ratio of 1.09) and chemical composition (an X-ray Photoelectron Spectroscopy (XPS) O/C atomic ratio of 0.36) of few-layer GOG. The thermally reduced GOH (r-GO(H)) delivers considerable area capacitance of 28 mu F.cm(-2), high rate capability and low electrochemical resistance as supercapacitor electrodes. The described hydrothermal process shows great promise for the cheap, green and efficient synthesis of few-layer graphene oxide for advanced applications.
引用
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页数:9
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