Phonon-induced relaxation of a two-state system in solids

被引：5

作者：

Albert, Jaroslav ^{[1
]}

Chudnovsky, E. M. ^{[1
]}

Garanin, D. A. ^{[1
]}

机构：

[1] CUNY Herbert H Lehman Coll, Dept Phys, Bronx, NY 10468 USA

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.74.115102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study phonon-induced relaxation of quantum states of a particle (e.g., electron or proton) in a rigid double-well potential in a solid. The relaxation rate due to Raman two-phonon processes has been computed. We show that in the two-state limit symmetry arguments allow one to express these rates in terms of independently measurable parameters. In general, the two-phonon processes dominate relaxation at higher temperature. Due to parity effects in a biased two-state system, their rate can be controlled by the bias.

引用

页数：5

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