Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x>0.69)

被引：160
作者：
Banal, R. G. [1 ]
Funato, M. [1 ]
Kawakami, Y. [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
PHYSICAL REVIEW B | 2009年 / 79卷 / 12期
关键词：
aluminium compounds; gallium compounds; III-V semiconductors; photoluminescence; semiconductor quantum wells; valence bands; LIGHT-EMITTING-DIODES; ALN; SEMICONDUCTORS; PARAMETERS; EMISSION; NITRIDES; GAN;
D O I：
10.1103/PhysRevB.79.121308
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The optical polarization in [0001]-oriented AlxGa1-xN/AlN multiple quantum wells (QWs) in the deep-ultraviolet region (x>0.69) was studied. Photoluminescence spectroscopy performed at 8.5 K revealed that the predominant polarization direction in QWs with a well width of similar to 1.5 nm switched from GaN-like E perpendicular to[0001] to AlN-like E parallel to[0001] at an Al composition x of similar to 0.83, where E is the electric field vector of emitted light. This Al composition is much higher than the previously reported critical compositions for polarization switching phenomena. Furthermore, decreasing the well width from more than 10 to 1.5 nm promoted E perpendicular to[0001] polarization. These results can be explained by the effect of strain and quantum confinement on the valence-band structures.
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