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2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC),
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[23]
Characteristics of non-annealed λ=1.35 μm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy
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MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
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