A review of III-nitride research at the Center for Quantum Devices

被引：19

作者：

Razeghi, M. ^{[1
]}

McClintock, R. ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; Light-emitting diodes; PHOTODETECTORS; ALXGA1-XN; SAPPHIRE; ALUMINUM; DETECTORS; FILMS;

D O I：

10.1016/j.jcrysgro.2009.01.097

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, we review the history of the Center for Quantum Devices' (CQD) III-nitride research covering the past 15 years. We review early work developing III-nitride material growth. We then present a review of laser and light-emitting diode (LED) results covering everything from blue lasers to deep UV LEDs emitting at 250 nm. This is followed by a discussion of our UV photodetector research from early photoconductors all the way to current state of the art Geiger-mode UV single photon detectors. (C) 2009 Published by Elsevier B.V.

引用

页码：3067 / 3074

页数：8

共 43 条

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